| PART |
Description |
Maker |
| ADN2812ACP ADN2812ACP-RL7 ADN2812 ADN2812ACP-RL AD |
N/A
CONTINUOUS RATE 12.3 MB/S TO 2.7 GB/S CLOCK AND DATA RECOVERY IC WITH INTEGRATED LIMITING AMP
|
AD[Analog Devices]
|
| ADN2813ACPZ-RL7 ADN2813 ADN2813ACPZ ADN2813ACPZ-50 |
Continuous Rate 10 Mb/s to 1.25 Gb/s Clock and Data Recovery IC with Integrated Limiting Amp
|
AD[Analog Devices]
|
| CCLH150 CCLH120 CCLH080 CCLH100 |
From old datasheet system
HIGH CURRENT CURRENT LIMITING DIODE
Leaded Current Limiting Diode Leaded
|
CENTRAL[Central Semiconductor Corp]
|
| HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B |
NOR GATE
(289.19 k)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes
T-PNP-SI-AF PO- .75W
T-NPN- SI-PO & SW-PD 40 W 或非
MOSFET-PWR N-CH HI SPEED 或非
MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous Drain Current - 100 Deg C:7.5A; Continuous Drain Current - 25 Deg C:10.5A 或非
MOSFET-PWR 800V 4A 或非
NOR GATE 或非
MOSFET-PWR 500V 8A
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| X9119TV14 X9119TV14-2.7 X9119TV14I X9119TV14I-2.7 |
IGBT MODULE, 1200V, 54A; Transistor type:IGBT4; Current, Ic continuous a max:56A; Voltage, Vce sat max:2.05V; Case style:MiniSkiiP 2 ; Current, Ic continuous b max:45A; Time, rise:35ns; Voltage, Vce sat typ:1.85V; Voltage, RoHS Compliant: Yes
Single Supply/Low Power/1024-Tap/2-Wire Bus
|
INTERSIL[Intersil Corporation]
|
| LT1769 1769I |
Constant-Current/Constant-Voltage 2ABattery Charger with Input Current Limiting
From old datasheet system
|
Linear
|
| CMJ4500 CMJ1000 CMJH080 CMJH100 CMJH120 CMJH150 CM |
Current Limiting Diodes
|
Central Semiconductor C...
|
| CL20M35 CL20M35-13 |
Current Limiting Diodes
|
Diotec Semiconductor
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
| CLD20B CLD20B-TP |
20mA Current Limiting Diode
|
Micro Commercial Components
|
| CL20M35 |
SMD Current Limiting Diodes
|
Diotec Semiconductor
|
| MMBT2907 |
Collector Current to Continuous :IC=-600mA
|
TY Semiconductor Co., Ltd
|
